bzt55-series www.vishay.com vishay semiconductors rev. 1.7, 22-nov-11 1 document number: 85637 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal zener diodes features ? very sharp reverse characteristic ? low reverse current level ? very high stability ?low noise ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? voltage stabilization primary characteristics parameter value unit v z range nom. 2.4 to 75 v test current i zt 2.5 to 5 ma v z specification pulse current int. construction single ordering information device name ordering code taped units per reel minimum order quantity bzt55-series bzt55- series-gs18 10 000 per 13" reel 10 000/box bzt55-series bzt55-series-g s08 2500 per 7" reel 12 500/box package package name weight molding compound flammability rating moisture sensitivity level soldering conditions quadromelf sod-80 34 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit power dissipation r thja ? 300 k/w p tot 500 mw zener current i z p v /v z ma junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c forward voltage (max.) i f = 200 ma v f 1.5 v
bzt55-series www.vishay.com vishay semiconductors rev. 1.7, 22-nov-11 2 document number: 85637 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? additional measurement of volt age group 9v1 to 75 at 95 % v zmin. ? 35 na at t j 25 c (1) t p ? 10 ms, t/t p > 1000 electrical characteristics (t amb = 25 c, unless otherwise specified) part number zener voltage range (1) test current reverse leakage current dynamic resistance temperature coefficient v z at i zt1 i zt1 i zt2 i r at v r z z at i zt1 z zk at i zt2 tk vz t amb = 25 c t amb = 150 c f = 1 khz v ma a v ? %/k min. nom. max. max. max. min. max. bzt55c2v4 2.28 2.4 2.56 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06 bzt55c2v7 2.5 2.7 2.9 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06 bzt55c3v0 2.8 3.0 3.2 5 1 < 4 < 40 1 < 90 < 600 - 0.08 - 0.05 bzt55c3v3 3.1 3.3 3.5 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05 bzt55c3v6 3.4 3.6 3.8 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05 bzt55c3v9 3.7 3.9 4.1 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05 bzt55c4v3 4 4.3 4.6 5 1 < 1 < 20 1 < 90 < 600 - 0.06 - 0.03 bzt55c4v7 4.4 4.7 5 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02 bzt55c5v1 4.8 5.1 5.4 5 1 < 0.1 < 2 1 < 60 < 550 - 0.02 0.02 bzt55c5v6 5.2 5.6 6 5 1 < 0.1 < 2 1 < 40 < 450 - 0.05 0.05 bzt55c6v2 5.8 6.2 6.6 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06 bzt55c6v8 6.4 6.8 7.2 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07 bzt55c7v5 7 7.5 7.9 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07 bzt55c8v2 7.7 8.2 8.7 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08 bzt55c9v1 8.5 9.1 9.6 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09 bzt55c10 9.4 10 10.6 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1 bzt55c11 10.4 11 11.6 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11 bzt55c12 11.4 12 12.7 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11 bzt55c13 12.4 13 14.1 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11 bzt55c15 13.8 15 15.6 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11 bzt55c16 15.3 16 17.1 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11 bzt55c18 16.8 18 19.1 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11 bzt55c20 18.8 20 21.2 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11 bzt55c22 20.8 22 23.3 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12 bzt55c24 22.8 24 25.6 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12 bzt55c27 25.1 27 28.9 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12 bzt55c30 28 30 32 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12 bzt55c33 31 33 35 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12 bzt55c36 34 36 38 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12 bzt55c39 37 39 41 2.5 0.5 < 0.1 < 5 30 < 90 < 500 0.04 0.12 bzt55c43 40 43 46 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12 bzt55c47 44 47 50 2.5 0.5 < 0.1 < 5 36 < 110 < 700 0.04 0.12 bzt55c51 48 51 54 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12 bzt55c56 52 56 60 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12 bzt55c62 58 62 66 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12 bzt55c68 64 68 72 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12 bzt55c75 70 75 79 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12
bzt55-series www.vishay.com vishay semiconductors rev. 1.7, 22-nov-11 3 document number: 85637 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? additional measurement of volt age group 9v1 to 75 at 95 % v zmin. ? 35 na at t j 25 c (1) t p ? 10 ms, t/t p > 1000 electrical characteristics (t amb = 25 c, unless otherwise specified) part number zener voltage range (1) test current reverse leakage current dynamic resistance temperature coefficient v z at i zt1 i zt1 i zt2 i r at v r z z at i zt1 z zk at i zt2 tk vz t amb = 25 c t amb = 150 c f = 1 khz v ma a v ? %/k min. nom. max. max. max. min. max. bzt55b2v4 2.35 2.4 2.45 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06 bzt55b2v7 2.64 2.7 2.76 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06 bzt55b3v0 2.94 3.0 3.06 5 1 < 4 < 40 1 < 90 < 600 - 0.08 - 0.05 bzt55b3v3 3.24 3.3 3.36 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05 bzt55b3v6 3.52 3.6 3.68 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05 bzt55b3v9 3.82 3.9 3.98 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05 bzt55b4v3 4.22 4.3 4.38 5 1 < 1 < 20 1 < 90 < 600 - 0.06 - 0.03 bzt55b4v7 4.6 4.7 4.8 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02 bzt55b5v1 5 5.1 5.2 5 1 < 0.1 < 2 1 < 60 < 550 - 0.02 0.02 bzt55b5v6 5.48 5.6 5.72 5 1 < 0.1 < 2 1 < 40 < 450 - 0.05 0.05 bzt55b6v2 6.08 6.2 6.32 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06 bzt55b6v8 6.66 6.8 6.94 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07 bzt55b7v5 7.35 7.5 7.65 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07 bzt55b8v2 8.04 8.2 8.36 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08 bzt55b9v1 8.92 9.1 9.28 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09 bzt55b10 9.8 10 10.2 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1 bzt55b11 10.78 11 11.22 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11 bzt55b12 11.76 12 12.24 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11 bzt55b13 12.74 13 13.26 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11 bzt55b15 14.7 15 15.3 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11 bzt55b16 15.7 16 16.3 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11 bzt55b18 17.64 18 18.36 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11 bzt55b20 19.6 20 20.4 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11 bzt55b22 21.55 22 22.45 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12 bzt55b24 23.5 24 24.5 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12 bzt55b27 26.4 27 27.6 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12 bzt55b30 29.4 30 30.6 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12 bzt55b33 32.4 33 33.6 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12 bzt55b36 35.3 36 36.7 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12 bzt55b39 38.2 39 39.8 2.5 1 < 0.1 < 5 30 < 90 < 500 0.04 0.12 bzt55b43 42.1 43 43.9 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12 bzt55b47 46.1 47 47.9 2.5 0.5 < 0.1 < 5 36 < 110 < 700 0.04 0.12 bzt55b51 50 51 52 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12 bzt55b56 54.9 56 57.1 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12 bzt55b62 60.8 62 63.2 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12 bzt55b68 66.6 68 69.4 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12 bzt55b75 73.5 75 76.5 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12
bzt55-series www.vishay.com vishay semiconductors rev. 1.7, 22-nov-11 4 document number: 85637 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - total power dissipation vs. ambient temperature fig. 2 - typical change of working voltage under operating conditions at t amb =25c fig. 3 - typical change of working voltage vs. junction temperature fig. 4 - temperature coefficient of v z vs. z-voltage fig. 5 - diode capacitance vs. z-voltage fig. 6 - forward current vs. forward voltage 0 120 160 0 100 300 400 500 600 p tot - total po w er dissipation (m w ) t am b - am b ient temperat u re (c) 200 95 9602 200 80 40 10 15 20 1 10 100 1000 v z - v oltage change (m v ) v z - z- v oltage ( v ) 25 95 9598 t j = 25 c i z = 5 ma 0 5 - 60 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v ztn - relative voltage change t j - junction temperature (c) 240 95 9599 0 v ztn = v zt /v z (25 c) 0 tk vz = 10 x 10 -4 /k 8 x 10 -4 /k 2 x 10 -4 /k 6 x 10 -4 /k 4 x 10 -4 /k - 4 x 10 -4 /k - 2 x 10 -4 /k - 5 0 5 10 15 v z - z- v oltage ( v ) 95 9600 i z = 5 ma 0 10 203040 50 tk v z - temperat u re coefficient of v z (10 -4 /k) 10 15 0 50 100 150 200 c d - diode capacitance (pf) v z - z- v oltage ( v ) 25 95 9601 20 t j = 25 c v r = 2 v 0 5 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t j = 25 c
bzt55-series www.vishay.com vishay semiconductors rev. 1.7, 22-nov-11 5 document number: 85637 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - z-current vs. z-voltage fig. 8 - z-current vs. z-voltage fig. 9 - differential z-resistance vs. z-voltage fig. 10 - thermal response 8 20 95 9604 0 20 40 60 80 100 i z - z-c u rrent (ma) p tot = 500 m w t am b = 25 c 046 12 v z - z- v oltage ( v ) 15 20 25 30 0 10 20 30 40 50 i z - z-c u rrent (ma) v z - z- v oltage ( v ) 35 95 9607 p tot = 500 m w t am b = 25 c 0 101520 1 10 100 1000 25 95 9606 t j = 25 c i z = 1 ma 5 ma 10 ma v z - z- v oltage ( v ) r z - differential z-resistance ( ) 5 1 10 100 1000 z thp - thermal resistance for p u lse cond. (k w ) t p - p u lse length (ms) 95 9603 10 -1 10 0 10 1 10 2 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 single p u lse r thja = 300 k/ w t = t jmax - t am b i zm = (- v z + ( v z 2 + 4r zj x t/z thp ) 1/2 )/(2r zj )
bzt55-series www.vishay.com vishay semiconductors rev. 1.7, 22-nov-11 6 document number: 85637 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): quadromelf sod-80 96 12071 cathode identification 1.25 (0.049) min. 3.7 (0.146) 3.3 (0.130) 0.47 (0.019) max. 2.5 (0.098) max. 1.6 (0.063) 1.4 (0.055) 5 (0.197) ref. foot print recommendation: 2 (0.079) min. > r3 (r0.118) glass 1.7 (0.067) glass the gap b et w een pl u g and glass can b e either on cathode or anode side
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